Berlin 2015 – scientific programme

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KR: Fachgruppe Kristallographie

KR 5: Multiferroics II (DF jointly with DS, KR, MA,TT)

KR 5.1: Invited Talk

Wednesday, March 18, 2015, 15:00–15:30, EB 107

Low energy consumption spintronics using multiferroic heterostructures — •Morgan Trassin — ETH Zurich, Zurich, Switzerland

Magnetization reversal in spintronics applications requires either an externally applied magnetic field or a large current density, which is accompanied by significant energy dissipation. A reversal of magnetization induced only by the application of an electric field would lead to low-power devices. Using multiferroics, previous approaches have seen limited success by only achieving rotations of the magnetization or a change in anisotropy by applying an electric field. To pave the way to new low-power devices, the more desirable electric-field driven magnetization reversal must be achieved and read out with a small current. In multiferroic heterostructures, ferromagnetic domains can be moved and switched using different charge states, strain configurations or magnetoelectric coupling. Ferroelectric domain engineering using epitaxial strain is critical towards the achievement of deterministic switchings. A combination of scanning probe microscopy and optical second harmonic generation were used to characterize multiferroic thin films strain state. Using electron microscopy and transport based techniques, a room temperature magnetization reversal of a CoFe thin layer solely induced by the application of a few volts to the heterostructure will be described.