Berlin 2015 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
MA: Fachverband Magnetismus
MA 13: Focused Session on Ferroic Domain Walls II (DF with MA)
MA 13.1: Topical Talk
Tuesday, March 17, 2015, 09:30–10:00, EB 107
Polarization charge as a reconfigurable dopant in wide-bandgap ferroelectrics — •Tomas Sluka — Ceramics Laboratory, EPFL Swiss Federal Institute of Technology, Lausanne, CH-1015 Switzerland — DPMC-MaNEP, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4, Switzerland
Tuning the charge carrier density in semiconductors by spatially fixed chemical impurities has been the cornerstone of electronics for over 50 years. As the miniaturization of CMOS technology approaches critical limits, efforts are turned to conceptually new devices based on emerging electronic properties of materials and interfaces. Recently it has been shown that the effect of chemical doping in semiconductors can be also induced by the polarization charge at Charged Domain Walls (CDWs) in wide-bandgap ferroelectrics. The polarization-charge doping, unlike the chemical doping, implies the intriguing possibility to write, displace, erase and re-create channels having a metallic-type conductivity inside an excellent insulator. This suggests the possible use of CDWs as real-time doping switches in hardware reconfigurable electronics. The talk will introduce methods of CDW engineering in ferroelectric crystals and thin films, the intrinsic properties of individual CDWs, their nanoscale manipulation and implementation into submicron device structures. Nanometers thick CDWs ranging from millimeters to tens of nanometers sizes and having metallic-type conductivity which exceeds 103 - 109 times the thermally activated conductivity of the bulk and neutral domain walls will be discussed.