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MA: Fachverband Magnetismus
MA 13: Focused Session on Ferroic Domain Walls II (DF with MA)
MA 13.4: Topical Talk
Dienstag, 17. März 2015, 10:40–11:10, EB 107
Influence of defects on domain wall mobility in ferroelectrics — •Susan Trolier-McKinstry1, Daniel Marincel1, Stephen Jesse2, Sergei Kalinin2, Huiaruo Zhang3, and Ian Reaney3 — 1Penn State University, University Park, PA, USA — 2ORNL — 3University of Sheffield
The dielectric and piezoelectric properties of ferroelectric thin films depend both on the intrinsic response of the material, as well as the motion of domain walls. There are a host of factors that can affect domain wall motion, including grain boundaries, other ferroelectric or ferroelastic domain walls, phase boundaries, dislocations, point defects, some electrode/dielectric interfaces, and core-shell microstructures. One of the challenges that faces the field is the difficulty in isolating the role played by a single type of pinning center or domain wall in controlling the response of an electroded ferroelectric. Instead the amalgamated response of millions of domains and domain walls is probed. This paper will describe the use of scanning probe microscopy and transmission electron microscopy to characterize the motion of domain walls in ferroelectric films, with a concentration on how mechanical stresses at the film * substrate interface and grain boundaries influence the correlated motion of domain walls. Measurements were made on 3 compositions of PZT with a variety of different grain boundary angles. It was found that the domain structure at the grain boundary controlled the width of influence on the domain wall motion. Depending on the angle this width ranged from 0 to hundreds of nm from the boundary.