Berlin 2015 – scientific programme
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MA: Fachverband Magnetismus
MA 17: Spintronics: Excitons and local spins (HL with MA/TT)
MA 17.10: Talk
Tuesday, March 17, 2015, 11:45–12:00, ER 270
Spin transport and its gate-induced modulation in non-degenerate Si at room temperature — •Masashi Shiraishi1, Tomoyuki Sasaki2, Yuichiro Ando1, Makoto Kameno1, Hayato Koike2, Toshio Suzuki3, and Tohru Oikawa2 — 1Kyoto Univ., Japan — 2TDK Corporation, Japan — 3AIT, Akita Prefectural Industrial Center, Japan
Si spintronics has been collecting tremendous attention, because of its long spin lifetime and achievement of spin transport at room temperature (RT) [1,2]. In the course of our study in Si spintronics, we have revealed that the so-called 3-terminal method [3] cannot completely preclude spurious signals [4], which is now widely recognized [5-7]. Here, we introduce some methods enabling to avoid detection of spurious signals, and report on reliable RT spin transport in non-degenerate n-type Si and gate-induced modulation of spin signals [8]. This is the first experimental demonstration of spin MOSFET at RT, which can pave a way to establish spin-based logic systems.
[1] T. Suzuki, T. Sasaki, M. Shiraishi et al., Appl. Phys. Express 4, 023004 (2011). [2] E. Shikoh, M. Shiraishi et al., Phys. Rev. Lett. 110, 127201 (2013). [3] S. Dash et al., Nature 462, 491 (2009). [4] Y. Aoki, M. Shiraishi et al., Phys. Rev. B86, 081201(R) (2012). [5] O. Txoperena et al., Appl. Phys. Lett. 102, 192406 (2013). [6] T. Uemura et al., Appl. Phys. Lett. 101, 132411 (2012). [7] O. Txoperena, H. Dery et al., Phys. Rev. Lett. 113, 146601 (2014). [8] T. Sasaki, M. Shiraishi et al., Phys. Rev. Applied 2, 034005 (2014).