Berlin 2015 – scientific programme

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MA: Fachverband Magnetismus

MA 19: POSTER Ia

MA 19.51: Poster

Tuesday, March 17, 2015, 09:30–13:00, Poster A

Low-field AMR in planar Hall effect structured manganites — •Eduard Unger¹, Camillo Ballani¹, Alexander Belenchuk², Sabastian Hühn¹, Markus Jungbauer¹, Markus Michelmann¹, and Vasile Moshnyaga¹ — ¹I. Physikalisches Institut, Universität Göttingen — ²IIEN, Academy of Sciences of Moldova, 3/3 Academiei street, MD-2628 Chisinan, Republic of Moldova

The anisotropic magnetoresistance (AMR) is widely used for sensing of both direction and absolute value of magnetic fields. Besides conventionally used ferromagnetic metallic materials, like permalloy (Ni₈₀Fe₂₀), thin epitaxial manganite films, e.g. La_0.7(Sr_1−yCa_y)_0.3MnO₃, show large AMR ratios at temperatures slightly below T_C, which can be tuned close to room temperature by changing the Sr/Ca ratio. For a special AMR geometry, called "planar Hall effect", the transverse voltage is a measure for the samples magnetization, M, thus allowing one to achieve very high field sensitivity by applying a small bias magnetic field close to coercive field H_C, where the largest effect dM/dH is expected. With the goal to achieve low H_C and high AMR ratios, we have grown thin manganite films on SrTiO₃ substrates with different orientations by metalorganic aerosol deposition (MAD) technique and studied the dependence of planar Hall effect on the temperature, applied magnetic field, film thickness and form anisotropy by combining electrical measurement with a MOKE setup in order to link magnetic and electrical properties. Financial support from EU FP 7 Project IFOX (interfacing oxides) is acknowledged.