Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 19: POSTER Ia
MA 19.55: Poster
Dienstag, 17. März 2015, 09:30–13:00, Poster A
Sputtered and annealed polycrystalline La0.67Sr0.33MnO3 and PbZr0.2Ti0.8O3 layers on Silicon (111) — •Oana T. Ciubotariu1,2, Manuel Monecke2, Patrick Thoma2, Roxana Dudric1, Romulus Tetean1, Dietrich R. T. Zahn2, and Georgeta Salvan2 — 1Faculty of Physics, Babeş-Bolyai University, RO-400084 Cluj-Napoca, Romania — 2Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany
In a new approach to fabricate organic spintronic devices, heterostructures of La0.67Sr0.33MnO3 (LSMO) and PbZr0.2Ti0.8O3 (PZT) thin films were proposed. By sandwiching ferroelectric layers between the ferromagnetic electrode and the organic semiconductor, the resistance of such devices can be controlled by applying electric and magnetic fields [1]. In this work we studied: LSMO, PZT, and PZT/LSMO layers on Si(111) substrates. The LSMO and PZT layers were deposited in a high vacuum chamber by pulsed radio frequency magnetron sputtering at room temperature. After the deposition, the LSMO layers were annealed in ambient atmosphere at 775 °C. Their crystallinity was confirmed via X-ray diffraction. The PZT films were annealed in ambient atmosphere at temperatures in the range 500-700 °C for one hour. For the LSMO films the annealing time was observed to influence the magnetic properties which were investigated using a SQUID magnetometer. The Curie temperature, the remanence, and the coercitive field increase with annealing time while the saturated magnetic moment reaches a constant value for annealing times larger than three hours. [1] Sun, D. et al. Nat. Commun. 5:4396 doi: 10.1038/ncomms5396 (2014)