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MA: Fachverband Magnetismus

MA 19: POSTER Ia

MA 19.57: Poster

Dienstag, 17. März 2015, 09:30–13:00, Poster A

Investigation on new TMR stacks for inverse magnetrostrictive sensors — •Niklas Dohmeier¹, Günter Reiss¹, Karsten Rott¹, Ali Tavassolizadeh², Dirk Meyners², and Eckhard Quandt² — ¹Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany — ²Institute for Materials Science, Christian-Albrechts-Universität zu Kiel

We show new approaches for magnetostrictive sensors based on tunneling magnetroresistive (TMR) elements. The key materials in these stacks are CoFeB and MgO which are standard materials for TMR stacks.
Since the inverse magnetostriction in this material leads only to increasing or decreasing (depending on the inital magnetization) of the resistance, the measurement of the bending through this effect is limited. That is why new TMR stacks were developed in which the magnetizations of the two ferromagnetic layers are not parallel or antiparallel. This leads to new opportunities for the application of magnetrostrictive sensors, e.g., in AFM.
We will discuss different approaches such as double-exchange biasing, shaping or the combination of in-plane and out-of-plane anistropy.
These TMR stacks have been made by magnetron sputtering and investigated by magneto-optical Kerr effect (MOKE), alternating-gradient magnetometry (AGM) and TMR measurements.