Berlin 2015 – scientific programme

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MA: Fachverband Magnetismus

MA 49: POSTER II

MA 49.25: Poster

Thursday, March 19, 2015, 15:00–18:00, Poster A

Exchange bias in antiferromagnetic Heusler alloy Ru2MnGe thin films — •Jan Balluff, Markus Meinert, and Günter Reiss — Center for Spinelectronic Materials and Devices, Physics Department, Bielefeld University, Germany

The Heusler compounds Ru2MnZ are experimentally known to be antiferromagnetic with Neel temperatures above room temperature [1,2]. Hence, they might be suitable as exchange biasing materials for spintronic devices. Here we report on results for the Ru2MnGe compound. Magnetic characterization of epitaxially grown samples on MgO and polycrystalline samples on thermally oxidized Si was done. A notable exchange bias at low temperatures was measured. We evaluate the exchange bias and discuss possible improvements of the effect, e.g. domain wall pinning. [1] Fukatani et al. (2013). Journal of the Korean Physical Society, 63(3), 711-715. [2] Ishida et al. (1995). Physica B: Condensed Matter, 210(2), 140-148.