Berlin 2015 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 52: Magnetic Thin Films II
MA 52.5: Vortrag
Freitag, 20. März 2015, 10:30–10:45, H 1012
Structural, electronic, and magnetic properties of perpendicularly magnetised Mn2RhSn thin films. — •Olga Meshcheriakova1,2, Albrecht Köhler1, Siham Ouardi1, Yukio Kondo3, Tahakide Kubota3, Chandra Shekhar1, Stanislav Chadov1, Gerhard H. Fecher1, Shigemi Mizukami3, and Claudia Felser1 — 1Max Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany — 2Max Planck Institute of Microsctructure Physics, 06120 Halle, Germany — 3WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
Epitaxial thin films of Mn2RhSn were grown on MgO(001) substrate by magnetron co-sputtering of the constituents. An optimized range of temperature for heat treatment was used to stabilize the tetragonal structure and to prevent the capping Rh layer from diffusing into the Heusler layer. Electronic and magnetic properties were analyzed by hard X-ray photoelectron spectroscopy as well as field- and temperature-dependent Hall and resistivity measurements. The measured valence spectra are in good agreement with the calculated density of states. The measured saturation magnetization corresponds to a magnetic moment of 1µB in the primitive cell. The magnetization measurements revealed an out–of–plane anisotropy energy of 89 kJ/m3 and a maximum energy product of 45.3 kJ/m3. The magnetoresistance ratio is 2% for fields of 9 T. The lattice parameter of the compound has a very small mismatch with MgO, which makes it promising for coherent electron tunnelling phenomena.