Berlin 2015 – scientific programme

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MA: Fachverband Magnetismus

MA 52: Magnetic Thin Films II

MA 52.6: Talk

Friday, March 20, 2015, 10:45–11:00, H 1012

Annealing Effects on Sputtered La0.67Sr0.33MnO3 Thin Films on Silicon (111) — •Manuel Monecke, Peter Richter, Peter Robaschik, Sreetama Banerjee, Georgeta Salvan, and Dietrich R.T. Zahn — Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany

La1-xSrxMnO3 (LSMO) is a promising electrode material for spintronic devices. The electrodes are typically deposited by pulsed laser deposition on single crystalline substrates with similar lattice constants, e.g. SrTiO3 [1], to obtain single crystalline layers. Here we investigate LSMO films deposited by pulsed radio frequency magnetron sputtering at room temperature on silicon (111) substrates with native oxide. Afterwards the films were annealed in ambient atmosphere at different temperatures in the range from 600 °C to 875 °C. In order to understand how the LSMO film properties change with annealing temperature we evaluated spectroscopic ellipsometry and magneto-optical Kerr effect spectroscopy data to obtain the diagonal and off-diagonal elements of the dielectric tensor. Furthermore we measured Raman spectroscopy to investigate the phonon fingerprint of the LSMO layer and of the interface layer formed between the silicon substrate and the LSMO layer. Finally we determined the Curie temperature and the hysteresis loop parameters of the films via SQUID-VSM measurements. The results show that the magnetic properties improve with higher annealing temperatures. However, interdiffusion is observed for annealing temperatures higher than 775 °C. [1] W. Xu et al. Applied Physics Letters 90 (2007) doi: 10.1063/1.2435907