Berlin 2015 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 7: Magnetic Semiconductors
MA 7.6: Vortrag
Montag, 16. März 2015, 12:45–13:00, EB 202
Transient photocurrent studies on ZnO based materials under the effect of magnetic field — •Yogesh Kumar1, Israel Lorite1, Pablo Esquinazi1, C. Zandalazini2, and Silvia P. Heluani3 — 1Division of Superconductivity and Magnetism, University of Leipzig, D-04103 Leipzig, Germany — 2Laboratorio de Física del Sólido, Dpto. de Física, FCEyT and CONICET, Universidad Nacional de Tucumán, 4000 Tucumán, Argentina — 3Laboratorio de Física del Sólido, Dpto. de Física, FCEyT, Universidad Nacional de Tucumán, 4000 Tucumán, Argentina
We have performed measurements of the transient photocurrent (wavelengths 370 nm) on ZnO based thin films and microwires. Thin films were grown in different atmospheres on c-sapphire using PLD and microwires were prepared using carbothermal process. Samples with three different magnetic behaviors were measured: non-magnetic samples, with magnetic order at the near-surface region, and samples having defect-induced magnetism in bulk. Transient photocurrent data for different types of samples show distinct influence of the magnetic field. Non-magnetic thin film grown in oxygen does not show any effect of the field, while the transient photocurrent of bulk magnetic samples reduces after application of a magnetic field. On the other hand, samples with near surface magnetism exhibit faster reduction in transient photocurrent when a field is applied. Hence, transient photocurrent under magnetic field can be used as a sensitive tool for the localization of magnetic defects.