Berlin 2015 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 9: Spin Excitations/Spin Torque
MA 9.1: Hauptvortrag
Montag, 16. März 2015, 15:00–15:30, H 0112
Ultra-fast three terminal perpendicular Spin-Orbit MRAM — •Gilles Gaudin1, Olivier Boulle1, Murat Cubukcu1, Marc Drouard1, Nicolaï Mikuszeit1, Liliana Buda Prejbeanu1, Claire Hamelin1, Ioan Mihai Miron1, Stéphane Auffret1, Nathalie Lamard2, Marie-Claire Cyrille2, Jürgen Langer3, Berthold Ocker3, Kevin Garello4, Can Onur Avci4, Manuel Baumgartner4, Abhijit Ghosh4, and Pietro Gambardella4 — 1Univ. Grenoble Alpes, CNRS, CEA, INAC-SPINTEC, F-38000 Grenoble, France — 2CEA, LETI, Minatec Campus, F-38000 Grenoble, France — 3Singulus AG, Kahl, Germany — 4Department of materials, ETH Zürich, Switzerland
STT-MRAM has been identified as a promising candidate for the non-volatile replacement of L1 and L2 SRAM cache memory technology. However, STT-MRAM suffers from serious reliability and endurance issues due to the rapid aging of the tunnel barrier induced by the high write current density at large speed (~ns for L1 cache) as well as erroneous writing by read current. We present a novel memory concept, named Spin Orbit Torque-MRAM (SOT-MRAM) that combines the advantages of STT and naturally solves these issues. The memory is based on the discovery that a current flowing in the plane of a magnetic multilayer with structural inversion asymmetry, such as Pt/CoAlOx, exerts a torque on the magnetization. This spin orbit torque can induce ultra-fast magnetization switching (<200ps in Pt/Co/AlOx). Micromagnetic simulations reveal that the magnetization reversal proceeds by domain nucleation followed by domain wall propagation.