Berlin 2015 – wissenschaftliches Programm

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MI: Fachverband Mikrosonden

MI 8: Ionenstrahlmethoden

MI 8.2: Vortrag

Mittwoch, 18. März 2015, 11:15–11:30, EMH 225

Latest developments in ultra-high 2D and 3D SIMS imaging using novel ion sources and a new TOF-SIMS/FIB system — •Sven Kayser, Derk Rading, Felix Kollmer, Rudolf Möllers, and Ewald Niehuis — ION-TOF GmbH, Heisenbergstr. 15, 48149 Münster, Deutschland

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a very sensitive surface analytical technique. In recent years bismuth clusters have become the standard primary ion species for all imaging applications providing a lateral resolution of down to 60 nm.

The combination of high resolution primary ion beams with conventional high dose sputter beams allows for the 3D analysis of inorganic samples. Unfortunately, this dual beam approach has its limitations for the analysis of extremely rough samples and samples with voids. To overcome this limitation we have developed a new TOF-SIMS/FIB system which makes 3D tomography SIMS analysis of rough or porous samples possible.

In addition new sputter ion sources were developed using large argon clusters for dual beam depth profiling of organic materials. With the new sources the preservation of molecular information under high-dose sputtering conditions has become possible.

In this contribution we will present the latest results in high-resolution 2D and 3D TOF-SIMS imaging and shall discuss examples from the field of organic depth profiling.