Berlin 2015 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 13: Electronic Structure of Surfaces II
O 13.5: Vortrag
Montag, 16. März 2015, 16:15–16:30, MA 041
Electronic and spin structure of topological surface state in Sn-based ternary topological insulators — •Maia G. Vergniory1, Tatyana V. Menshchikova2, Igor V. Silkin3, Yuri M. Koroteev3, Sergey V. Eremeev3, and Evgueni V. Chulkov4 — 1Max-Planck-Institut für Mikrostrukturphysik, Halle, 06120 Germany — 2Tomsk State Univeristy, Tomsk, 634050 Russia — 3Institute of Strength and Materials Science, Siberian Branch, Tomsk, 634021 Russia — 4Donostia International Physics Center, Donostia-San Sebastian, 20018 Spain
We report the bulk and surface electronic properties and spin polarization of a new rich family of Sn-based ternary complex topological insulators studied by means of first principles calculations. These compounds exist in different stoichiometries: SnxAyBz (A:Sb and Bi) (B: Te and Se). The crystal structure of these compounds is characterized by alternating along hexagonal axis quintuple, septuple and nonuple layer van der Waals bonded building blocks. We reveal that the bulk band gap in these systems is about 100 meV and the spin polarization near the Dirac point is up to 85%. Within the same family, for some of these compounds, which crystal structure has ionic-covalent bonded Bi2Te3 and crystalline topological insulator SnTe atomic layers within building block, the complex SOI-induced bulk band inversion caused by competition of band inversions in Bi2Te3 and in SnTe layers occurs and results in inherently nonlinear dispersion of the topological surface state.