Berlin 2015 – scientific programme
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O: Fachverband Oberflächenphysik
O 3: Inorganic/Organic Interfaces: Growth I
O 3.4: Talk
Monday, March 16, 2015, 11:15–11:30, MA 005
STM study of molecular n-dopants for organic electronics — •Justus Krüger1,2, Frank Eisenhut1,2, Jörg Meyer1,2, Anja Nickel1,2, Gianaurelio Cuniberti1,2 und Francesca Moresco1,2 — 1Institute for Materials Science and Max Bergmann Center of Biomaterials, TU Dresden, 01062 Dresden, Germany — 2Center for Advancing Electronics Dresden, TU Dresden, 01062 Dresden, Germany
Controllable doping of organic semiconductors is of paramount importance for future application of organic electronics; however, effective air-stable and solution-processable n-type dopants are still rare. A new class of molecular materials based on 1H-benzoimidazole derivates has recently been identified [1] as promising candidate for strong n-type doping. Whereas the experimental results look encouraging, there is still a lack of knowledge on the detailed doping mechanism. Therefore, we have investigated the properties of one particular dopant on a single molecular level by scanning tunneling microscopy (STM) at low temperatures. By depositing dopant and C60 molecules on the same Au(111) surface, the electronic and structural interactions of the host-guest system can be addressed. In particular, spectroscopic measurements of dopant molecules resting on C60 clusters will help to understand the working mechanism of the doping effect. [1] P. Wei et al., J. Am. Chem. Soc. 2010 132 (26), 8852-8853