Berlin 2015 – scientific programme

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O: Fachverband Oberflächenphysik

O 33: Graphene

O 33.10: Poster

Tuesday, March 17, 2015, 18:15–21:00, Poster A

Preparation of Graphene using the confinement controlled sublimation method — •Cornelis Hilscher, Ulf Berges, Dominique Handschak, Christoph Keutner, Lothar Brosda, Philipp Espeter, and Carsten Westphal — Experimentelle Physik I, TU Dortmund

Graphene is one of the most promising novel materials. Due to rapid, out of equilibrium growth at 1200 ^∘C in ultra high vacuum successfull production of high quality graphene, suitable for electronic applications, still causes many problems. There are some possible solutions like using argon or an enclosure to overcome these issues.

In this work the confinement controlled sublimation method [1] will be used to grow graphene on SiC(0001)-6H. The silicon carbide (SiC) is surrounded by a graphite enclosure with a small pinhole. Thus, the sublimating silicon stays in the enclosure causing a high silicon vapor pressure during the preparation process. Accordingly, the silicon’s sublimation rate is decreased significantly, which leads to a 300 ^∘C increase of the graphene formation temperature. Hence, the growth proceeds near to thermodynamic equilibrium and the graphene layer takes much longer to form. So very homogeneous graphene is expected.

Commissioning and characterization of the preparation chamber is still in progress and includes optimization of parameters like background pressure, heating time and heating temperature.

[1] de Heer, W. A. et al (2011): Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide. In: PNAS, 108, 41, 16900−16905