Berlin 2015 – scientific programme
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O: Fachverband Oberflächenphysik
O 33: Graphene
O 33.14: Poster
Tuesday, March 17, 2015, 18:15–21:00, Poster A
Symmetry broken states of high mobility graphene on boron nitride devices suited for combined transport and STM experiments — •Felix Jekat, Tjorven Johnsen, Nils Freitag, Peter Nemes-Incze, and Markus Morgenstern — II. Physikalisches Institut B, RWTH Aachen, Otto-Blumenthal-Straße, 52074 Aachen
Monolayer graphene is an ideal candidate to combine STM and transport measurements in the Quantum Hall regime. Such measurements require samples in which the exposed graphene surface is clean of processing residues and show high mobility. Here we present magnetotransport measurements of a monolayer graphene on boron nitride prepared by a process which fulfills the above requirements. The sample temperature is as low as 280 mK at a magnetic field of up to 10 T. The presented device shows a field effect mobility of 50,000 cm2/Vs. We observe full degeneracy splitting, at a magnetic field of 6 T in the zeroth and first Landau Level within the hole regime and the insulating phase in the zeroth Landau level. In the electron regime, only two fold degeneracy splitting is present. Temperature dependent measurements were conducted to determine the activation gaps of the broken symmetry states revealing gaps up to 80 K.