Berlin 2015 – scientific programme

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O: Fachverband Oberflächenphysik

O 33: Graphene

O 33.17: Poster

Tuesday, March 17, 2015, 18:15–21:00, Poster A

Innovative protocols for the epitaxial growth of graphene and boron nitride on Ag(111) — •Manuela Garnica, Felix Bischoff, Yuanqin He, Jacob Ducke, Martin Schwarz, Johannes V. Barth, and Willi Auwärter — Physik Department E20, Technische Universität München, Germany.

In recent years, the research of graphene and other 2D materials has spurred tremendous expectations for potential technological applications. In particular, the chemical vapour deposition (CVD) technique has been shown to be an effective method to grow large-areas of graphene and h-BN on highly reactive metals [1]. However, the low reactivity of nobel metals makes the synthesis of 2D materials using the standard CVD techniques cumbersome [2]. In this work, we explore different growth methods of graphene and h-BN layers on Ag(111) substrates. We combine novel and well-established protocols like CVD, E-Beam evaporation or ion gun assisted deposition. The characterization of the structural properties of these layers was achieved by atomic-scale scanning probe microscopy (STM/AFM). We report the observation of different domain length, edges and defects for the resulting layers. Furthermore, we explore with subnanometer resolution the electronic properties and local surface potential of the layers by means of scanning tunneling spectroscopy.

[1] M. Batzill, Surf. Sci. Rep. 67 (2012), p. 83

[2] B. Kiraly et al. Nat. Commun. 4 (2013) 2804; F. Müller et al. Phys. Rev. B 82, (2010) p. 113406; Martinez-Galera et al, Nano Lett 11, (2011) p3576