Berlin 2015 – scientific programme

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O: Fachverband Oberflächenphysik

O 35: Nanostructures at Surfaces

O 35.10: Poster

Tuesday, March 17, 2015, 18:15–21:00, Poster A

Contamination induced defect formation during Chemical Vapor Deposition of graphene and the formation of silicon dendrites — •Umut Kamber¹, Cem Kincal¹, Bariş Yağci², Özgür Birer², and Oğuzhan Gürlü¹ — ¹Istanbul Technical University, Istanbul, Turkey — ²Koç University, Istanbul, Turkey

Chemical Vapor Deposition (CVD) is an effective method used for producing graphene on copper foils. During CVD process Cu foils are heated up to 1200 K in a quartz tube under the flow of a mixture of hydrogen and argon. In order to grow graphene methane is let in to the tube for a short while with a very small flow rate compared to argon or hydrogen. Depending on the temperature during growth, flow rates of each gas, as well as on heating and cooling rates, the quality of graphene is affected. In our work we encountered silicon contamination on some of the sample batches. We have made systematic preparations and measurements in order to understand the reason of such contamination. Depending on the existence of graphene the shapes and sizes of such contaminants were observed to vary. The formation of point like and dendritic silicon-oxide islands on graphene and their manipulation by means of localized etching will be presented.