Berlin 2015 – scientific programme
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O: Fachverband Oberflächenphysik
O 35: Nanostructures at Surfaces
O 35.16: Poster
Tuesday, March 17, 2015, 18:15–21:00, Poster A
Hydrogenation of doped silicon clusters — •Christine Bülow1, Vicente Zamudio-Bayer1, Arkadiusz Lawicki1, Georg Leistner1, Konstantin Hirsch1, Bernd von Issendorff2, and Tobias Lau1 — 1Institut für Methoden und Instrumentierung der Forschung mit Synchrotronstrahlung, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany — 2Physikalisches Institut, Universität Freiburg, Freiburg, Germany
Silicon is the most widely used semiconductor for various applications. Due to the demand of miniaturization of electronic devices there has been a high interest to study silicon nanoparticles. Small 3d-transition-metal doped silicon clusters show a distinct behavior of their magnetic properties: While in exohedrally doped species the dopant exhibits almost atomic spin magnetic moments, endohedrally doped silicon clusters loose the spin polarization of the metal dopant atom. This quenching is coordination driven and several theoretical investigations predict that hydrogen passivation can restore the magnetic moment of the dopant. Additionally, hydrogen passivation stabilises the clusters.
In this work we present two different methods to produce free hydrogen passivated silicon clusters in the gas phase using a magnetron sputtering source. Hydrogenation is either done by introducing hydrogen into the plasma of the magnetron or by physio- or chemisorption in a collision cell. The cluster composition is analysed in a time-of-flight mass spectrometer. We discuss the mass spectra of these two different preparation methods.