Berlin 2015 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 38: Semiconductor Substrates

O 38.5: Poster

Dienstag, 17. März 2015, 18:15–21:00, Poster A

Characterization of Dy induced reconstructions on Si(111) — •Frederic Timmer¹, Robert Oelke¹, Stephan Appelfeller², Henrik Wilkens¹, and Joachim Wollschläger¹ — ¹Physics Department, Osnabrück University, Germany — ²Institute of Solid State Physics, TU Berlin, Germany

Epitaxial thin films of rare earth silicides are of particular interest because of their possible application as low-resistivity contacts to n-type Si [1]. Therefore the growth of Dy on Si(111) in the monolayer regime has been investigated in-situ by Spot Profile Analysis Low Energy Electron Diffraction (SPA-LEED), Surface X-Ray Diffraction (SXRD) and Auger Electron Spectroscopy (AES).

Dy coverages of 0.1ML - 3ML were deposited by Physical Vapor Deposition (PVD) at different substrate temperatures. A plethora of reconstructions were observed by SPA-LEED, including the (2√3×2√3), (√3×√3) and (1×1) reconstructions known by literature [1]. In addition we observed a spot splitting for the (2√3×2√3)-spots due to the periodically arrangement of domain boundaries.

The in-situ SXRD studies were carried out at the ID03 beamline of ESRF. Dy was deposited by PVD on the Si(111) substrate at 600^∘C until the (2√3×2√3) reconstruction signal yielded maximum intensity. Subsequently 30 surface rods and 8 crystal truncation rods were recorded in order to determine the atomic structure of the reconstruction.

[1] I.Engelhardt et al., Surf. Sci. 600 (2006) 755-761