DPG Phi
Verhandlungen
Verhandlungen
DPG

Berlin 2015 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

O: Fachverband Oberflächenphysik

O 38: Semiconductor Substrates

O 38.7: Poster

Tuesday, March 17, 2015, 18:15–21:00, Poster A

Surface Analysis of MOVPE-prepared GaP(111)B — •Peter Kleinschmidt1, Pingo Mutombo2, Oleksandr Romanyuk2, Marcel Himmerlich3, Weihong Zhao1, Andreas Nägelein1, Matthias Steidl1, Agnieszka Paszuk1, Sebastian Brückner1, Oliver Supplie1, Stefan Krischok3, and Thomas Hannappel11Photovoltaics Group, Institute of Physics, Technische Universität Ilmenau, 98684 Ilmenau, Germany — 2Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 162 00 Prague 6, Czech Republic — 3Technical Physics I, Institute of Physics, Technische Universität Ilmenau, 98684 Ilmenau, Germany

We have investigated the MOVPE-prepared GaP(111)B surface by LEED, XPS, and STM as well as ab intio DFT. We obtained atomically resolved occupied-state STM images, characterized by large, atomically flat terraces. Most areas on these terraces exhibit no discernable order, in agreement with the (1×1) LEED pattern we obtained. However, locally, the STM images also show (√3×√3) and c(2×4) ordering. Our measurements indicate P-induced surface states. The different surface reconstructions were analyzed by ab initio DFT and relative surface formation energies of the Ga-rich and P-rich structures were derived. The most energetically favorable structures were used for STM image simulations and compared with the experimental STM images.

100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2015 > Berlin