Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
O: Fachverband Oberflächenphysik
O 4: Electronic Structure of Surfaces I
O 4.10: Vortrag
Montag, 16. März 2015, 12:45–13:00, MA 041
A new setup for investigation of advanced materials by means of dynamic-XPS — •Sergey Babenkov1, Olga Molodtsova1, Victor Aristov1,2,3, Frank Scholz1, Joern Seltmann1, Ivan Shevchuk1, Leif Glaser1, and Jens Viefhaus1 — 1DESY Hamburg, Germany — 2Uni Hamburg, Germany — 3ISSP RAS, Russia
Using dynamic-XPS method is a big step toward understanding of fast processes on the solid surfaces and subsurfaces of advanced materials, which are taking place during changing of different conditions. The experimental setup for such experiments, based on a hemispherical electron spectrometer Argus (Omicron NanoTechnology GmbH), has been built up, commissioned and currently is available for regular users of beamline P04 (PETRA III, DESY). Such combination allows to acquire both traditional scanning and extremely fast snapshot (down to 0.1 sec/spectrum) XPS spectra of several core levels (CL). It opens new possibilities to real time characterization of the fast processes both from quantitative and qualitative point of view by dynamical measuring of XPS. The concept was verified by real time XPS characterization of thermally induced process of graphene formation on model cubic-SiC(001)/Si(001) wafer. We were able to control time/temperature/rare-gas pressure parameters and follow the changes in C 1s CL spectra. Moreover, we present the dynamic-XPS study of controllable metal-organic interface formation (Indium/CuPcF4) at room temperature conditions. This work was supported by grants of RFBR No 13-02-00818, 14-02-00949, BMBF-Project No. 05K12GU2, PSP-Element No. U4606BMB1211.