Berlin 2015 – scientific programme
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O: Fachverband Oberflächenphysik
O 4: Electronic Structure of Surfaces I
O 4.8: Talk
Monday, March 16, 2015, 12:15–12:30, MA 041
Interface electronic structure and charge transfer processes in layered ferecrystalline [(SnSe)1.15]5(TaSe2)5 compound: Photoemission study — •Pavel Shukrynau1, Lars Smykalla1, Matthias Falmbigl2, David Johnson2, and Michael Hietschold1 — 1Institute of Physics, Technische Universität Chemnitz, Reichenhainer Straße 70, D-09107 Chemnitz, Germany — 2Materials Science Institute and Chemistry Department, University of Oregon, Eugene, Oregon 97403, USA
In situ synchrotron radiation photoelectron spectroscopy was used to characterize electronic structure at the cleaved interface of the layered ferecrystalline [(SnSe)1.15]5(TaSe2)5 material. Detailed analysis of the Sn 3d, Ta 5d and Se 4p core levels spectra obtained at various incident angles revealed significant differences in chemical bonding of atoms in surfaces with divers terminating layers. On the basis of energy positions and widths of the Sn-derived features of the valence band spectra, a weak coupling between SnSe and TaSe2 layers is suggested. However, the Ta 5d signal reveals different electronic structures depending on the terminating layer. The observed changes can be attributed to stronger interaction between TaSe2-TaSe2 layers and a large charge transfer between Se 4p and Ta 5d orbitals. Comparisons were made with classical misfit compounds.