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O: Fachverband Oberflächenphysik

O 53: Topological Insulators: Transport (HL with DS/MA/O/TT)

O 53.3: Vortrag

Mittwoch, 18. März 2015, 12:15–12:30, ER 270

The effect of strain on the two-dimensional topological insulator HgTe — •Philipp Leubner, Andreas Budewitz, Christoph Brüne, Hartmut Buhmann, and Laurens Molenkamp — Experimentelle Physik III, Fakultät für Physik, Universität Würzburg, Germany

In the past years, HgTe quantum wells have been used extensively to study the magnetotransport signature of two-dimensional topological insulators, namely the quantum spin Hall effect. It has been shown that the band structure of those systems strongly depends on the thickness of the quantum well, and that, in particular, the topology changes from trivial to nontrivial at a critical thickness of 6.3 nm.

As an additional degree of freedom, the influence of strain on the band structure is investigated in this work. By using different CdTe-ZnTe superlattices grown on GaAs as virtual substrates, we are able to tune the strain of the HgTe quantum well layer from tensile to compressive, and thus modify the shape of the valence band.

Depending on strain, temperature dependent transport measurements on nominally identical wells reveal either features of topological insulators or semimetals, with the obtained fitting parameters nicely agreeing with band structure calculations. Further experiments focus on the correlation between the magnitude of the inverted bandgap and stability of the quantum spin Hall edge states.