Berlin 2015 – scientific programme
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O: Fachverband Oberflächenphysik
O 53: Topological Insulators: Transport (HL with DS/MA/O/TT)
O 53.5: Talk
Wednesday, March 18, 2015, 12:45–13:00, ER 270
Quantum hall states equilibration in lateral heterojunctions on inverted HgTe quantum wells — •M. Reyes Calvo1,2, Christoph Brüne3, Christopher Ames3, Philipp Leubner3, Hartmut Buhmann3, Laurens W. Molenkamp3, and David Goldhaber-Gordon1 — 1Department of Physics, Stanford Universtiy, Stanford, U.S.A. — 2C.I.C. Nanogune, San Sebastián, Spain — 3Physikalisches Institut (EP3), Universität Würzburg, Würzburg, Germany
We study lateral heterojunctions on HgTe quantum wells with inverted band structure. At high densities and fields, we can explore the equilibration between Quantum Hall (QH) states with different filling factor. The resulting resistance plateaus are particularly clear in the n-n'-n quadrant and fit the expected values for a 2D electron gas heterojunction. The low density and moderate magnetic field regime is of more interest, since due to the inverted band structure of HgTe, Quantum Spin Hall (QSH) edge states could be present. In this regime, we observe unexpected features in the Hall resistance, which could be associated with the interplay between chiral QH edge modes and helical QSH edge modes.