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O: Fachverband Oberflächenphysik

O 63: 2D Materials beyond Graphene

O 63.4: Poster

Mittwoch, 18. März 2015, 18:15–21:00, Poster A

Epitaxial growth of MoS₂ monolayers on graphene/SiC — •Maciej Dendzik^1,2, Jill Miwa^1,2, Soren Ulstrup^1,2, Signe Gronborg Sorensen², Antonija Grubisic Cabo^1,2, Marco Bianchi^1,2, Matteo Michiardi^1,2, Jeppe Vang Lauritsen², and Philip Hofmann^1,2 — ¹Aarhus University, Department of Physics and Astronomy, Aarhus, Denmark — ²Aarhus University, Interdisciplinary Nanoscience Center, Aarhus, Denmark

Monolayers of transition metal dichalcogenides (TMDCs) are a novel class of materials which recently attracted considerable attention due to their interesting physical properties and possible applications in fields of electronics and spintronics. Nevertheless, the growth of high quality single-layered films of TMDCs still remains a challenge. Here we present an in situ physical vapour deposition approach of growing MoS₂ monolayers. Intermediate stages of the process are characterised by means of scanning tunneling microscopy, providing an insight into the growth mechanism. Grown samples are further investigated by angle resolved photoemission and compared with MoS₂ monolayers grown on Au(111). The results indicate high quality and large coverage of the monolayer.