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O: Fachverband Oberflächenphysik
O 66: Electronic Structure of Surfaces
O 66.16: Poster
Mittwoch, 18. März 2015, 18:15–21:00, Poster A
Subsurface contributions in epitaxial rare-earth silicides — •Olaf Lübben1, Jorge I. Cerdá2, Alexander N. Chaika3, and Igor V. Shvets1 — 1Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), School of Physics, Trinity College, Dublin 2, Ireland — 2Instituto de Ciencia de Materiales de Madrid, ICMM-CSIC, Cantoblanco, 28049 Madrid, Spain — 3Institute of Solid State Physics RAS, Chernogolovka, Moscow district 142432, Russia
Metallic thin films of heavy rare-earth silicides epitaxially grown on Si(111) substrates have been widely studied in recent years because of their appealing properties: unusually low values of the Schottky barrier height, an abrupt interface, and a small lattice mismatch. Previous studies also showed that these silicides present very similar atomic and electronic structures. Here, we examine one of these silicides (Gd3Si5) using scanning tunneling microscopy (STM) image simulations that go beyond the Tersoff-Hamann approach. These simulations strongly indicate an unusual STM depth sensitivity for this system.