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O: Fachverband Oberflächenphysik
O 66: Electronic Structure of Surfaces
O 66.5: Poster
Mittwoch, 18. März 2015, 18:15–21:00, Poster A
Manipulation and control of electronic properties of Si:P δ-layers — •Federico Mazzola1, Craig Polley3, Jill Miwa2, Michelle Simmons4, and Justin Wells1 — 1NTNU, Norwegian University of Science and Technology — 2Department of Physics and Astronomy, Aarhus University — 3MAX-IV Laboratory, Lund, Sweden — 4Centre for Quantum Computation & Communication Technology School of Physics The University of New South Wales
Many body interactions play a fundamental role for material properties such as conductivity, scattering and transport of carriers. In particular, electron-phonon- coupling (EPC) has been attracting interest because is thought to be a prerequisite for superconductivity.
δ-doping in Si, which consists in placing a highly conductive P layer just beneath the Si surface, constitutes an important step for quantum computer architectures allowing for the possibility of shrinking the scale of devices down to the atomic scale, with a single atom transistor and atomic scale nanowire having been demonstrated.
Here I will introduce ARPES and Resonant-PES characterization and explain how such a technique can be used to understand many-body interactions in the electronic band-structure of Si:P δ-layers and to characterize the dimension of this new hybrid system. In particular, we will introduce a characterization of the electronic confinement of a sub-surface state and we will study how such a state is affected by many-body interactions.