Berlin 2015 – scientific programme

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O: Fachverband Oberflächenphysik

O 83: Surface Chemistry and Growth

O 83.9: Talk

Thursday, March 19, 2015, 12:30–12:45, MA 144

Is a surface reconstruction really necessary for an epitaxial Fe growth on a GaAs(001) surface? — •Dominique Handschak, Frank Schönbohm, Tobias Lühr, Christoph Keutner, Ulf Berges, and Carsten Wetsphal — TU Dortmund, Exp. Physik 1, Otto-Hahn-Str.4, 44221 Dortmund, Germany

Multilayer consisting of the ferromagnet Iron (Fe) and the semiconductor Gallium-Arsenide (GaAs) are in the focus of the research in spintronics. The GMR effect arises at the interface, where the electrons are scattered differently depending on their spin and mutual orientation of the magnetization within the Fe-film. Therefore, the knowledge of the chemical composition and structure of the interface are important in order to improve the efficiency of the effect. We report on the interface structure of two similar system, Fe/GaAs(clean) and Fe/GaAs(4x2) using x-ray photoelectron diffraction (XPD) patterns in order to examine the necessity of a reconstruction for an epitaxial Fe growth. It can be shown that the inter-diffusion between the substrate and the adsorbate is prevented if Fe is prepared on a GaAs(4x2)-sample. Furthermore, the predicted stronger out-diffusion of the Arsenic can be confirmed by the XPD patterns of the Fe/GaAs(clean) system.