Berlin 2015 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 9: Transition-Metal Dichalcogenides and Boron Nitride (HL with O/TT)
O 9.1: Vortrag
Montag, 16. März 2015, 11:45–12:00, ER 270
k·p theory for two-dimensional transition metal dichalcogenide semiconductors — •Andor Kormanyos and Guido Burkard — University of Konstanz
We present k·p Hamiltonians (for a review see [1]) parametrised by ab initio density functional theory calculations to describe the dispersion of the valence and conduction bands at their extrema (the K, Q, Γ, and M points of the hexagonal Brillouin zone) in atomic crystals of semiconducting monolayer transition metal dichalcogenides. We review the parametrisation of the essential parts of the k·p Hamiltonians for MoS2, MoSe2, WS2, and WSe2, including the spin-splitting and spin-polarisation of the bands We use k·p theory to analyse:
i) optical transitions in two-dimensional transition metal dichalcogenides over a broad spectral range;
ii) to discuss magnetotransport properties of the charge carriers in the K and −K valleys.
A. Kormányos, G. Burkard et al, arXiv:1410.6666