Berlin 2015 – scientific programme
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O: Fachverband Oberflächenphysik
O 99: Semiconductor Substrates: Structure, Epitaxy and Growth
O 99.3: Talk
Friday, March 20, 2015, 11:00–11:15, MA 042
Tailoring Si(100) substrate surfaces for GaP growth by Ga predeposition — •Michael Häberle, Benjamin Borkenhagen, Gerhard Lilienkamp, and Winfried Daum — Clausthal University of Technology, Institute of Energy Research and Physical Technologies, Leibnizstraße 4, 38678 Clausthal-Zellerfeld, Germany
For GaP-on-Si(100) heteroepitaxy, currently considered as a model system for monolithic integration of III-V semiconductors on Si(100), the surface steps of Si(100) have a major impact on the quality of the GaP film. Monoatomic steps cause antiphase domains in GaP with detrimental electrical properties. A viable route is to grow the III-V epilayer on single-domain Si(100) with biatomic steps, but preferably not at the expense of reduced terrace widths introduced by miscut substrates [1]. We have performed in situ investigations of the influence of Ga deposition on the surface terrace dynamics of Si(100) at elevated substrate temperatures by low-energy electron microscopy (LEEM). Starting from nearly equally distributed TA- and TB-terraces of a two-domain Si(100) surface, submonolayer deposition of Ga resulted in a transformation into a surface with prevailing TA-terraces. By increasing deposition rate or decreasing temperature, we induced restructuring of Si(100) into a surface dominated by TB-terraces as reported by Hara et al. [2]. The occurrence and mutual transformations of surface structures with different terrace and step structures in a narrow range of temperatures and Ga deposition rates are discussed.
[1] K. Volz et al., J. Cryst. Growth 315, 37 (2011)
[2] S. Hara et al., J. Appl. Phys. 98, 083513 (2005)