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TT: Fachverband Tiefe Temperaturen

TT 103: Transport: Poster Session

TT 103.38: Poster

Donnerstag, 19. März 2015, 15:00–18:00, Poster B

Pd/PtBi based topological insulators prepared by sputter deposition — •Benedikt Ernst¹, Daniel Ebke¹, Stanislav Chadov¹, Robin Klett², Günter Reiss², and Claudia Felser¹ — ¹Max Planck Institute for Chemical Physics of Solids, Dresden, Germany — ²Thin Films and Physics of Nanostructures, Bielefeld University, Germany

Heusler compounds have exhibited manifold physical properties in the recent years and attracted a lot of interest in the field of spintronic applications due to their half-metallic properties.

In this work, we have prepared Heusler materials such as LaPdBi, LaPtBi and YPtBi for which a topological insulating behavior was predicted. In a combinatorial approach we used a mixture of Pd and Pt to tune the band gap. Co-deposition by DC- and RF magnetron sputtering was used to prepare corresponding thin films. To realize an epitaxial film growth in the crystallographic C1_b structure on MgO-substrates, a buffer layer was applied and optimized. Initial transport properties will be discussed with regard to the film composition and the crystallographic properties.