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TT: Fachverband Tiefe Temperaturen

TT 103: Transport: Poster Session

TT 103.42: Poster

Donnerstag, 19. März 2015, 15:00–18:00, Poster B

Transport measurements on selective area grown Te-based topological insulator thin films — •Christian Weyrich^1,2, Melissa Schall^1,2, Jörn Kampmeier^1,2, Martin Lanius^1,2, Gregor Mussler^1,2, Thomas Schäpers^1,2, and Detlev Grützmacher^1,2 — ¹Peter Grünberg Institute (PGI- 9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — ²Virtual Institute for Topological Insulators (VITI), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany

We present magnetotransport measurements on Bi₂Te₃ and Sb₂Te₃ thin films, grown on prepatterned structures atop silicon-on-insulator substrates by molecular beam epitaxy. The substrates contain Si mesa fabricated from the 70nm thick Si(111) top layer on a 300nm thick SiO₂ buried oxide layer. Therefore, we were able to utilize the difference in surface configuration between the Si(111) and the amorphous SiO₂, since only the hexagonal silicon surface supports growth of the tellurides. Using transport we show that films of comparable or even higher quality can be achieved using this method which furthermore evades the need of any additionally ex-situ patterning of the layers. With this, we pave the road to a simple fabrication method for nanometer sized structures that circumvents common problems of conventional methods like ion etching including hardened remains of photo resist and the like.