Berlin 2015 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
TT: Fachverband Tiefe Temperaturen
TT 103: Transport: Poster Session
TT 103.54: Poster
Thursday, March 19, 2015, 15:00–18:00, Poster B
Highly resistive states in TiN wires induced by a high-impedance environment — •Ina Schneider1, Tatyana Baturina1,2, Klaus Kronfeldner1, and Christoph Strunk1 — 1Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — 2A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Russia
We investigate different wires with similar aspect ratios, fabricated from a superconducting TiN thin film, at low temperatures and magnetic fields up to 15 T. The width of the wires varies between 20 nm and 1 µm. For the largest wires, we observe a typical superconducting behavior with a drop to zero resistance at sufficiently low temperatures and zero magnetic field. The medium sized wires show qualitatively similar I(V)- and R(T)-characteristics as the wide wires. However, their resistance does not drop to zero but saturates at finite values. For the smallest wire, the R(T)-characteristics reveal a slight increase of the resistance at zero field already.
By embedding the wires into a high impedance environment, we can induce a highly resistive state for the 80 nm wide wire, that manifests as a flat region in the I(V)-characteristics at very low bias voltages. This region starts to establish at magnetic fields where one could still observe a decrease of the resistance in the low-impedance environment measurements. At the peak of the magnetoresistance, this region corresponds to a resistance value which is by three orders of magnitude higher than that in the low-impedance environment.