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TT: Fachverband Tiefe Temperaturen
TT 104: Topological Insulators II (jointly with MA, DS, HL, O)
TT 104.8: Vortrag
Donnerstag, 19. März 2015, 16:45–17:00, EB 202
WSe2 Synthesis, Characterization and Properties — •Catherine R Rajamathi, Binghai Yan, Marcus Schmidt, Kumari Gaurav Rana, Chandra Shekhar, Siham Ouardi, Guido Kreiner, and Claudia Felser — Max-Planck Institute for Chemical Physics of Solids, Dresden
Layered transition metal dichalcogenides (TMDs) are widely studied systems as they are chemically versatile and technologically enthralling.
The facile tunability of their electronic structure by varying certain parameters - carrier type (n- or p-type), composition, structure or sample size expand their applications from catalysis to topological insulators.
Single crystals were synthesized from its polycrystalline components using SeCl4 as the transport agent.
Mono- or few-layered tungsten selenide obtained by the scotch-tape technique discussed in this talk are direct-gap semiconductors. FET devices fabricated from a few-layered sample of WSe2 show ambipolar transistor behavior.
In addition, hybrid materials such as WSe2−xTex may be promising due to high magnetoresistance and surface states on WTe2 single crystals.