Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 105: Quantum Information Systems: Si Vacancies and NV Centers (jointly with HL)

TT 105.1: Vortrag

Donnerstag, 19. März 2015, 15:00–15:15, ER 164

Spin Physics of vacancy-related defects in silicon carbide — •Michel Bockstedte^1,2 and Felix Schütz¹ — ¹Lst. Theor. Festkörperphysik, Friedrich-Alexander Universität Erlangen-Nürnberg, 91058 Erlangen, Germany — ²FB Materialwissenschaften & Physik, Universität Salzburg, 5020 Salzburg, Austria

SiC as a semi conductor fullfills all necessary requirements¹ for implenting qubits via defect electron spins, such as the silicon vacancy, the di-vacancy or a complex of a silicon vacancy and a nitrogen impurity. The spin-selective fluorescence in contrast to the prototypical NV-center in diamond operates in the spectral range favorable for telecom applications. Spin-manipulation of the intrinsic centers was demonstrated even at room temperature.^2,3 For the silicon vacany in SiC inter system crossings (ISCs) from high to yet unknown low spin states govern the spin-relaxation. By DFT and a DFT-based CI-hamiltonian we analyze the spin physics of the defect in 4H-SiC. Experimentally observed luminescence lines can be assigned to the inequivalent defect sites corobarating the experimental findings. Owing to the spin (S=3/2) and a stronger electron-phonon coupling in the excited state, ISCs destinct from the NV-center are predicted.
¹ J. R. Weber et al., PNAS 107, 8513 (2010).
² F. Koehl et al., Nature479, 84 (2011).
³ V. A. Soltamov et al., Phys. Rev. Lett. 108 226402 (2012)