Berlin 2015 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 105: Quantum Information Systems: Si Vacancies and NV Centers (jointly with HL)

TT 105.3: Talk

Thursday, March 19, 2015, 15:30–15:45, ER 164

Coherent Spin Manipulation of Si-Vacancies in Silicon Carbide at Ambient Conditions — •Dmitrij Simin¹, Andreas Sperlich¹, Victor Soltamov², Pavel Baranov², Georgy Astakhov¹, and Vladimir Dyakonov^1,3 — ¹Experimental Physics VI, Julius Maximilian University of Wuerzburg, 97074 Wuerzburg — ²Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia — ³ZAE Bayern, 97074 Wuerzburg

For already over two decades, quantum information processing has been the hot topic in the field of information theory. To recognize and to employ the most suitable material and information carrier from the vast amount of possibilities is the declared goal of ongoing research activities all over the world. Among others, a promising candidate are Si-vacancies in Silicon Carbide [1], where spin control has been successfully conducted at ambient conditions [2, 3]. In our recent work we go one step further and present the successful time-resolved manipulation of the spin of the Si-Vacancies at ambient conditions using the pulsed-ODMR technique. We observed Rabi-oscillations in an ensemble of defects and determined spin-relaxation properties, demonstrating high potential of SiC for various quantum applications.

[1] D. Riedel et al., Phys. Rev. Lett. 109, 226402 (2012)

[2] H. Kraus et al., Nat. Phys. 10, 157-162 (2014)

[3] H. Kraus et al., Sci. Rep. 4, 5303 (2014)