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TT: Fachverband Tiefe Temperaturen
TT 115: Metallic Nanowires on the Atomic Scale (jointly with DS, O)
TT 115.12: Vortrag
Freitag, 20. März 2015, 12:45–13:00, H 2032
Structural Fluctuations on Si(553)-Au — •Ingo Barke1, Stefan Polei1, Paul C. Snijders2, and Karl-Heinz Meiwes-Broer1 — 1University of Rostock, Institute of Physics, 18051 Rostock, Germany — 2Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
The (1x3) reconstruction on Si(553)-Au can be excited to a (1x2) structure by charge injection from the tip of a scanning tunneling microscope [1,2]. Time-resolved measurements enable access to the system's dynamics revealing rapid fluctuations due to a competition between excitation and decay. In this contribution we focus on the time-dependent response to the specific charge injection site. Two distinct locations of high excitation efficiency are identified. This site specific behavior is also found in spatially resolved current-distance curves which are further employed for a quantitative analysis of the current-dependent structural transition of this system. The results are discussed in view of structural and electronic ground state properties of Si(553)-Au.
[1] S. Polei, P.C. Snijders, S.C. Erwin, F.J. Himpsel, K.-H. Meiwes-Broer, and I. Barke, Phys. Rev. Lett. 111, 156801 (2013).
[2] S. Polei, P.C. Snijders, K.-H. Meiwes-Broer, and I. Barke, Phys. Rev. B 89, 205420 (2014).