Berlin 2015 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 13: Focus Session: Functional Semiconductor Nanowires I (organized by HL)

TT 13.4: Talk

Monday, March 16, 2015, 10:30–10:45, EW 201

Cd₃As₂ Nanowires by Chemical Vapour Deposition — •Piet Schönherr and Thorsten Hesjedal — Department of Physics, Clarendon Laboratory, University of Oxford, Oxford OX1 3PU, United Kingdom

Cd₃As₂ has been well known for its very high mobility. Recently, it was discovered that the material displays two Dirac points with linearly dispersing states that are stabilized by crystal symmetry (three-dimensional Dirac semimetal). The Dirac cones live in three-dimensional k-space unlike topological insulators that only have two-dimensional Dirac cones on their surface. This makes Cd₃As₂ a three-dimensional analogue of graphene.

We present the growth and characterisation of Cd₃As₂ nanowires including results from electric transport measurements. Nanowires with a diameter as small as 10 nm were grown in a self-catalysed vapour-liquid-solid process using chemical vapour deposition. We analyse the growth mechanism and compare the vibrational modes of Cd₃As₂ nanostructures with bulk samples.