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09:30 |
TT 13.1 |
Hauptvortrag:
Exploring the optical properties of 1D nanomaterials at sub-nanometer scale with a direct correlation to its structure at atomic scale — •Jordi Arbiol
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10:00 |
TT 13.2 |
Selective Area Growth of GaN Nanowires and Nanotubes — •Martin Hetzl, Fabian Schuster, Saskia Weiszer, Jose A. Garrido, María de la Mata, Jordi Arbiol, and Martin Stutzmann
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10:15 |
TT 13.3 |
Stability of heteroepitaxial coherent growth modes on nanowire radial surfaces — •Thomas Riedl and Jörg Lindner
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10:30 |
TT 13.4 |
Cd3As2 Nanowires by Chemical Vapour Deposition — •Piet Schönherr and Thorsten Hesjedal
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10:45 |
TT 13.5 |
MOCVD Growth and Characterization of InGaN/GaN Nanowire-based core/shell Heterostructures — Bartosz Foltynski, Christoph Giesen, and •Michael Heuken
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11:00 |
TT 13.6 |
Modulation doped GaAs-AlGaAs core-shell nanowires — •Dominik Irber, Stefanie Morkötter, Jonathan Becker, Nari Jeon, Daniel Rudolph, Bernhard Loitsch, Markus Döblinger, Max Bichler, Jonathan J. Finley, Lincoln J. Lauhon, Gerhard Abstreiter, and Gregor Koblmüller
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11:15 |
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Coffee break
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11:30 |
TT 13.7 |
Hauptvortrag:
Studying single semiconductor nanowires using a hard X-ray nanoprobe — •Gema Martinez-Criado
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12:00 |
TT 13.8 |
Influence of surface depletion on electrical conductivity of freestnding GaAs nanowires investigated by a multi-tip STM — •Weihong Zhao, Matthias Steidl, Stefan Korte, Hubertus Junker, Werner Prost, Peter Kleinschmidt, and Thomas Hannapel
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12:15 |
TT 13.9 |
Antimony doped ZnO nanowires — •Thomas Kure, Alexander Franke, Sarah Schlichting, Emanuele Poliani, Felix Nippert, Markus R. Wagner, Marcus Müller, Peter Veit, Sebastian Metzner, Frank Bertram, Eswaran S. Kumar, Faezeh Mohammadbeigi, Jürgen Christen, Janina Maultzsch, Simon Watkins, and Axel Hoffmann
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12:30 |
TT 13.10 |
Hard X-ray detection in a single 100 nm-diameter nanowire — •Jesper Wallentin, Markus Osterhoff, Robin Wilke, Karl-Magnus Persson, Lars-Erik Wernersson, Michael Sprung, and Tim Salditt
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12:45 |
TT 13.11 |
synchrotron X-ray photoelectron spectroscopy study of GaAs/InAs core/shell nanowires grown by MBE — •behnam khanbabaee, torsten rieger, nataliya demarina, detlev grützmacher, mihail Ion lepsa, rainer timm, and ullrich pietsch
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13:00 |
TT 13.12 |
Seebeck effect measurements on single InAs and GaAs nanowires — •Alexander Hirler, Vanessa Schaller, Jonathan Becker, Bernhard Loitsch, Stefanie Morkötter, Julian Treu, Gerhard Abstreiter, Jonathan Finley, and Gregor Koblmüller
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