Berlin 2015 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 24: Focus Session: Functional Semiconductor Nanowires II (organized by HL)
TT 24.5: Talk
Monday, March 16, 2015, 16:15–16:30, EW 201
Carrier dynamics in GaN-nanowire based AlN/GaN hetero-structures doped with Germanium — •Nils Rosemann1, Pascal Hille2, Jan Müßener2, Pascal Becker2, María de la Mata3, César Magén4, Jordi Arbiol3,5, Jörg Teubert2, Jörg Schörmann2, Martin Eickhoff2, and Sangam Chatterjee1 — 1Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Heinrich-Buff-Ring 16, D-35392 Gießen, Germany — 3Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC, Campus de la UAB, ES-08193 Bellaterra, CAT, Spain — 4Laboratorio de Microscopas Avanzadas, Instituto de Nanociencia de Aragon-RAID, Universidad de Zaragoza, ES-50018 Zaragoza Spain — 5Institucio Catalana de Recerca I Estudis Avantas (ICREA), ES-08010 Barcelona, CAT, Spain
Wide gap materials based on AlN/GaN are promising candidates for opto electronic devices in the UV-range. Here, nanowires (NWs) are of particular interest as they exhibit a significantly reduced potential for structural defects compared to bulk due to efficient strain-relaxation during the self-assembled growth. We investigate the influence of Ge doping which has a much larger covalent radius than Si or Mg on a series of AlN/GaN structures based on GaN NWs using a streak-camera setup with high spatial resolution.