Berlin 2015 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 24: Focus Session: Functional Semiconductor Nanowires II (organized by HL)
TT 24.8: Talk
Monday, March 16, 2015, 17:30–17:45, EW 201
Influence of growth parameters on electrical transport characteristics in InAs Nanowires — •Jonathan Becker1, Stefanie Morkötter1, Phillip Geselbracht1, Julian Treu1, Simon Hertenberger1, Max Bichler1, Gerhard Abstreiter1,2, Jonathan J. Finley1, and Gregor Koblmüller1 — 1Walter Schottky Institut und Physik Department, TU München, Garching, Germany — 2Walter Schottky Institut and Physik Department, TU München, Garching, Germany
In this work we present recent results on the electrical transport of nominally undoped MBE grown InAs nanowires (NWs). In particular we explore the influence of growth parameters, microstructure, aspect ratio and contact metal on the electrical properties of the NWs. Four-terminal measurements on planar, back-gated NW field effect transistor (NWFET) devices revealed room-temperature mobilities ranging from 500 to 2000 cm2/Vs and on-off ratios of >103 at 4.2K. The obtained electron densities are in the order of 1017cm−3. A strong effect of the diameter and the microstructure, altered by growth parameters, on the mobility was observed. The latter was investigated by HRTEM, simulations and temperature-dependent measurements in high detail. Here, the impact of band discontinuieties induced by stacking faults and WZ/ZB crystal phase boundaries on electron scattering is evaluated.