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TT: Fachverband Tiefe Temperaturen

TT 50: Graphene (organized by O)

TT 50.4: Poster

Dienstag, 17. März 2015, 18:15–21:00, Poster A

Magnetotransport of epitaxial Graphene with single ion-implanted Boron, Nitrogen and Carbon atoms — Philip Willke¹, •Anna Sinterhauf¹, Sangeeta Thakur³, Julian A. Amani², Thomas Kotzott¹, Steffen Weikert², Kalobaran Maiti³, Hans Hofsäss², and Martin Wenderoth¹ — ¹IV. Physikalisches Institut, Universität Göttingen, Germany — ²II. Physikalisches Institut, Universität Göttingen, Germany — ³Department of Condensed Matter Physics and Materials’ Science, TIFR, Mumbai, India

Using magnetotransport (MR) experiments we investigate the transport properties of SiC-Graphene in combination with low-energy ion implantation. Here, we demonstrate the incorporation of single boron, nitrogen and carbon atoms for which the microscopic structure has been additionally studied by scanning tunneling microscopy [1]. The ion-implanted samples exhibit a higher resistance and a lower mobility than undoped samples. Additionally, we find a positive MR for undoped samples switching to a negative MR for doped samples at high magnetic fields, especially for ¹¹B⁺- and ¹²C⁺-ions. We explain this behavior with the additional presence of localized scattering centers which we describe in the context of weak localization theory. This work was supported by DFG priority program 1459 ”Graphene”.

[1] P. Willke et al., Appl. Phys. Lett. 105, 111605 (2014)