Berlin 2015 – scientific programme
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TT: Fachverband Tiefe Temperaturen
TT 50: Graphene (organized by O)
TT 50.7: Poster
Tuesday, March 17, 2015, 18:15–21:00, Poster A
Self-assembled PTCDI monolayers for band gap engineering using organic solid/solid wetting deposition — •Oliver Gretz1,2 and Frank Trixler1,2,3 — 1Technische Universität München, School of Education, München, Germany — 2Zentrum Neue Technologien, Deutsches Museum, München, Germany — 3Department für Geo- und Umweltwissenschaften & Center for NanoScience, Sektion Kristallographie, Ludwig-Maximilians-Universität München, Germany
Graphene based semiconductors could be fabricated by inducing a band gap at the Dirac point in the graphene band structure. According to theoretical investigations perylene-3,4,9,10-tetra-carboxylic-diimide (PTCDI) is a promising organic semiconductor to open up a band gap in graphene by monomolecular physisorption. However the self-assembly of PTCDI monolayers on graphite could only be shown by epitaxial growth in ultra-high vacuum, yet.
Organic Solid/Solid Wetting Deposition (OSWD) is a process which enables the deposition of insoluble molecules such as organic semiconductors on substrate surfaces under ambient conditions. Here we show first results with PTCDI using OSWD, obtained via scanning tunneling microscopy, which are crucial for tuning the band structure of graphene.