Berlin 2015 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 50: Graphene (organized by O)

TT 50.8: Poster

Tuesday, March 17, 2015, 18:15–21:00, Poster A

Interaction between polycrystalline copper substrate and graphene during atmospheric Chemical Vapor Deposition — •Umut Kamber, Cem Kincal, Hakki Tunç Çiftçi, Berk Zengin, Dilek Yildiz, and Oğuzhan Gürlü — Istanbul Technical University, Istanbul, Turkey

Due to its inevitable potential to be used in wide scale electronics applications, research on high quality, large area, single sheet graphene production became an intense field. For this purpose Chemical Vapor Deposition (CVD) was presented as the most efficient method. In order to obtain defect-free CVD grown graphene sheets, understanding the interaction between graphene and substrate surface is crucial. We observed that graphene can grow over different Cu facets in a continuous film, as reported earlier. Graphene films are depressed near the step-edges of the substrate and moiré patterns occur on some of the atomically flat terraces. Formation of the moiré patterns on only some of the Cu facets indicate differences between the interaction of graphene with different Cu facets. Formation of the graphene on the Cu surface clearly affects the mobility of the Cu atoms on the relevant facet at high temperature. Moreover, we observed that if the copper surfaces are covered by bulk carbon without forming graphene, copper surface crystallizes more properly than graphene covered one. Thus, we claim that formation of graphene effects the crystallization of copper surface, which generates a growth feedback affecting the quality of the graphene film grown.