DPG Phi
Verhandlungen
Verhandlungen
DPG

Berlin 2015 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

TT: Fachverband Tiefe Temperaturen

TT 51: Focus Session: Electric Power Applications of Superconductivity

TT 51.4: Hauptvortrag

Mittwoch, 18. März 2015, 11:15–11:45, H 0104

High field transport properties of MBE processed Fe-based superconducting thin films — •Kazumasa Iida — Nagoya University, Japan — IFW Dresden, Germany

It has been reported that Fe-based superconductors show high upper critical fields with low anisotropies at low temperatures [1]. Hence these materials may offer a unique possibility for high field magnet applications. However, only a few reports on high-field transport properties of Co-doped Ba-122 and Fe(Se,Te) have been published and the only one for SmFeAs(O,F) thin films to date [2-4]. In order to use this material class for applications, the knowledge of in-field and its orientation dependence of transport properties in a wide range of external fields need to be clarified. In this talk, I will report on high-field (up to dc 45 T) transport properties of P-doped Ba-122, SmFeAs(O,F) and NdFeAs(O,F) thin films prepared by MBE. Although P-doped Ba-122 has the lowest Tc, self-field Jc of over 6 MA/cm2 at 4.2 K is recorded, which is the highest value ever reported in Fe-based superconductors. Additionally, in-field performance of P-doped Ba-122 shows comparable to those of NdFeAs(O,F) and SmFeAs(O,F) for H||c. On the other hand, both NdFeAs(O,F) and SmFeAs(O,F) exhibited higher Jc for H||ab due to the intrinsic pinning [4]. These results indicate that P-doped Ba-122 is the most promising candidates for high-field magnet applications.


[1] M. Putti et al., Supercond. Sci. Technol. 23, 034003 (2010)

[2] C. Tarantini et al., Phys. Rev. B 86, 214504 (2012)

[3] Q. Li, W. Si, and I. K. Dimitrov, Rep. Prog. Phys. 74,

124510 (2011)

[4] K. Iida et al., Sci. Rep. 3, 2139 (2013)

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2015 > Berlin