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TT: Fachverband Tiefe Temperaturen

TT 67: Correlated Electrons: f-Electron Systems

TT 67.2: Vortrag

Mittwoch, 18. März 2015, 15:15–15:30, H 3005

GdRh₂Si₂: Single crystal growth and characterization — •Kristin Kliemt and Cornelius Krellner — Physikalisches Institut, Goethe Universität Frankfurt, 60438 Frankfurt am Main, Germany

Among the ternary silicides of the type RT₂Si₂ (R = rare earth, T = transition metal) which crystallize in the bodycentered tetragonal ThCr₂Si₂ structure, GdRh₂Si₂ has attracted much attention in the last decades [1,2] as it belongs to the compounds with rare earth elements with exceptional magnetic properties e.g. CeRh₂Si₂, YbRh₂Si₂ and EuRh₂Si₂. Single crystals of GdRh₂Si₂ were grown for the first time by a modified Bridgman method from indium flux.

We report on the growth procedure and show the results of specific heat, magnetic and electrical transport measurements on the single crystals. The high quality of the crystals was proved by Laue X-ray scattering, X-ray powder diffraction, EDX microprobe analysis and resistivity measurements.

[1] I. Felner, I. Nowik, Solid State Commun. 47, 831 (1983).

[2] G.A. Cabrera-Pasca et al.,

J. Phys. Condens. Matter 24, 416002 (2012).