Berlin 2015 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 71: Correlated Electrons: Poster Session
TT 71.16: Poster
Mittwoch, 18. März 2015, 15:00–18:00, Poster B
Influence of strong disorder on incoherent transport near the Mott transition: Statistical DMFT approach — •Milos Radonjic1,2, Darko Tanaskovic2, and Vladimir Dobrosavljevic3 — 1Center for Electronic Correlations and Magnetism, Theoretical Physics III, Institute of Physics, University of Augsburg, D-86135 Augsburg, Germany — 2Scientific Computing Laboratory, Institute of Physics Belgrade, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia — 3Department of Physics and National High Magnetic Field Laboratory, Florida State University, Tallahassee, Florida 32306, USA
We present the study of disordered half-filled Hubbard model within the Statistical dynamical mean field theory, which is a unique theoretical method reliable and controllable in a wide temperature, disorder and interaction range. We have successfully applied this method, for the first time, on the finite size cubic lattice, at finite temperature.
The results show that the finite size effects are negligible already on the lattice with 6*6*6 sites (except at the lowest temperatures, deep in the Fermi liquid regime). Also we confirmed that disorder is strongly screened on the metallic side of the Mott MIT and that inelastic scattering is dominant outside of the Fermi liquid region. We defined a local resistivity and proposed a resistor network method for calculating lattice dc resistivity. Two types of sites can be identified: strongly correlated - with the local occupation close to 1, and weakly correlated - away from local half-filling. Strongly correlated sites are responsible for strong, non-monotonic temperature dependence of the resistivity.