Berlin 2015 – scientific programme

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TT: Fachverband Tiefe Temperaturen

TT 72: Low-Dimensional Systems: Poster Session

TT 72.9: Poster

Wednesday, March 18, 2015, 15:00–18:00, Poster B

Synthesis and electrical transport properties of the LaVO₃/SrTiO₃ interface — •Richard Hentrich¹, Jens Hänisch^1,2, Ludwig Schultz¹, and Ruben Hühne¹ — ¹IFW Dresden, Germany — ²ITEP, Karlsruhe Institute of Technology (KIT), Germany

We have investigated the two dimensional electron gas at the interface of band gap insulator SrTiO₃ and mott insulator LaVO₃ in comparison to the well-known, purely band insulating LaAlO₃/SrTiO₃ system. Thin films of LaVO₃ were grown epitaxially on TiO₂ terminated SrTiO₃ single crystal substrates using RHEED-monitored pulsed laser deposition. Optimal process parameters for layer-by-layer growth were found resulting in the growth of atomically smooth films of well-defined thickness. Electrical transport measurements revealed an insulator-metal transition at a film thickness of six unit cells, which is different to previously reported values. Conducting samples showed metallic behavior in a wide temperature range, with their conductivity showing little to no dependence on layer thickness. This led to the conclusion of the metallic behavior being a merely interface driven effect.